![]() ![]() This design is evaluated by using the Solar Cell Analysis Program in One Dimension (SCAP1D), developed at more » Purdue University. Recombination losses under the contacts are reduced by providing a heavily doped polysilicon layer between the metal and the silicon surface. Both surfaces (front and back) are considered to be passivated by a silicon dioxide layer to reduce the surface recombination velocities. A back-surface relfector compensates for the optical absorption losses due to cell thinness. Bulk recombination losses are reduced by making the cell thin (100. Innovative design features are incorporated to reduce losses. The back-surface field has a marginal effect in improving efficiency with minority carrier diffusion length less than cell = ,Ī new high-efficiency silicon solar-cell design is analyzed. mu.m emitter thickness (3) front-surface recombination velocity of 1000 cm/s. mu.s (2) complementary error function doping profile for 0.2. mu.m, with minority carrier lifetime on the order of 100. This efficiency was estimated by using: (1) cell thickness of 280. The analysis indicates that a maximum efficiency of 20% is achievable. Sensitivity analysis of an 18.7% efficient cell reported in the literature is made with respect to key device parameters. Results are compared with experimental data on representative high-efficiency cells. A brief description of the mathematical model used in the SCAP1D program, including heavy doping effects, is presented. They are used as basic analytical tools for high-efficiency silicon solar cell design, evaluation, and sensitivity analysis. ![]() A copy of Solar Cell Analysis Program in 1 Dimension (SCAP1D) from Purdue University and a copy of Stanford University Process Engineering Model-II (SUPREM II) from Stanford University were obtained and made functional at the Jet Propulsion Laboratory. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |